Optical properties of Mn+ doped GaAs
文献类型:期刊论文
作者 | Zhou HY (Zhou Huiying) ; Qu SC (Qu Shengchun) ; Liao SZ (Liao Shuzhi) ; Zhang FS (Zhang Fasheng) ; Liu JP (Liu Junpeng) ; Wang ZG (Wang Zhanguo) |
刊名 | optoelectronics and advanced materials-rapid communications
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出版日期 | 2010 |
卷号 | 4期号:6页码:784-787 |
关键词 | Photoluminescence Ion implantation Manganese GaAs ION-IMPLANTATION SEMICONDUCTORS CENTERS DOTS |
合作状况 | 国内 |
学科主题 | 半导体材料 |
收录类别 | SCI |
资助信息 | the above work was supported by the national basic research program of china (2006cb604904, 2006cb604908), the hi-tech r & d program of china (2006aa03z0408, 2006aa03z0404), the scientific research fund of central south university of forstry and technology. |
公开日期 | 2010-08-17 |
源URL | [http://ir.semi.ac.cn/handle/172111/13475] ![]() |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | Zhou HY ,Qu SC ,Liao SZ ,et al. Optical properties of Mn+ doped GaAs[J]. optoelectronics and advanced materials-rapid communications,2010,4(6):784-787. |
APA | Zhou HY ,Qu SC ,Liao SZ ,Zhang FS ,Liu JP ,&Wang ZG .(2010).Optical properties of Mn+ doped GaAs.optoelectronics and advanced materials-rapid communications,4(6),784-787. |
MLA | Zhou HY ,et al."Optical properties of Mn+ doped GaAs".optoelectronics and advanced materials-rapid communications 4.6(2010):784-787. |
入库方式: OAI收割
来源:半导体研究所
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