In-plane optical anisotropy in GaAsN/GaAs single-quantum well investigated by reflectance-difference spectroscopy
文献类型：期刊论文
| 作者 | Yu JL (Yu J. L.) ; Chen YH (Chen Y. H.) ; Ye XL (Ye X. L.) ; Jiang CY (Jiang C. Y.) ; Jia CH (Jia C. H.) |
| 刊名 | journal of applied physics
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| 出版日期 | 2010 |
| 卷号 | 108期号:1页码:art. no. 013516 |
| 关键词 | MOLECULAR-BEAM EPITAXY STRAIN RELAXATION GROWTH TEMPERATURE INTERFACE ALLOYS GAAS HETEROSTRUCTURES MICROSTRUCTURE GANXAS1-X NITROGEN |
| 通讯作者 | chen, yh, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: yhchen@semi.ac.cn |
| 合作状况 | 其它 |
| 英文摘要 | the interface properties of ganxas1-x/gaas single-quantum well is investigated at 80 k by reflectance difference spectroscopy. strong in-plane optical anisotropies (ipoa) are observed. numerical calculations based on a 4 band k . p hamiltonian are performed to analyze the origin of the optical anisotropy. it is found that the ipoa can be mainly attributed to anisotropic strain effect, which increases with the concentration of nitrogen. the origin of the strain component epsilon(xy) is also discussed.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-08-17t01:40:04z no. of bitstreams: 1 japplphys_108_013516.pdf: 259380 bytes, checksum: 164599214d7e14cadb24bf76f2dff61b (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-08-17t02:26:54z (gmt) no. of bitstreams: 1 japplphys_108_013516.pdf: 259380 bytes, checksum: 164599214d7e14cadb24bf76f2dff61b (md5); made available in dspace on 2010-08-17t02:26:54z (gmt). no. of bitstreams: 1 japplphys_108_013516.pdf: 259380 bytes, checksum: 164599214d7e14cadb24bf76f2dff61b (md5) previous issue date: 2010; we thank dr. yuefa li to provide the samples. this work is supported by the 973 program (grant nos. 2006cb604908 and 2006cb921607), and the national natural science foundation of china (grant nos. 60625402 and 60990313); 其它 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | we thank dr. yuefa li to provide the samples. this work is supported by the 973 program (grant nos. 2006cb604908 and 2006cb921607), and the national natural science foundation of china (grant nos. 60625402 and 60990313) |
| 语种 | 英语 |
| 公开日期 | 2010-08-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13485]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Yu JL ,Chen YH ,Ye XL ,et al. In-plane optical anisotropy in GaAsN/GaAs single-quantum well investigated by reflectance-difference spectroscopy[J]. journal of applied physics,2010,108(1):art. no. 013516. |
| APA | Yu JL ,Chen YH ,Ye XL ,Jiang CY ,&Jia CH .(2010).In-plane optical anisotropy in GaAsN/GaAs single-quantum well investigated by reflectance-difference spectroscopy.journal of applied physics,108(1),art. no. 013516. |
| MLA | Yu JL ,et al."In-plane optical anisotropy in GaAsN/GaAs single-quantum well investigated by reflectance-difference spectroscopy".journal of applied physics 108.1(2010):art. no. 013516. |
入库方式： OAI收割
来源：半导体研究所
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