Self-Heating Effect on the Two-State Lasing Behaviors in 1.3-mu m InAs-GaAs Quantum-Dot Lasers
文献类型：期刊论文
| 作者 | Ji HM (Ji Hai-Ming) ; Yang T (Yang Tao) ; Cao YL (Cao Yu-Lian) ; Xu PF (Xu Peng-Fei) ; Gu YX (Gu Yong-Xian) ; Wang ZG (Wang Zhan-Guo) |
| 刊名 | japanese journal of applied physics
 |
| 出版日期 | 2010 |
| 卷号 | 49期号:7页码:art. no. 072103 |
| 关键词 | DEPENDENCE WELL |
| 通讯作者 | ji, hm, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. 电子邮箱地址: tyang@semi.ac.cn |
| 合作状况 | 其它 |
| 英文摘要 | experimental and theoretical study of the self-heating effect on the two-state lasing behaviors in 1.3-mu m self-assembled inas-gaas quantum dot (qd) lasers is presented. lasing spectra under different injected currents, light-current (l-i) curves measured in continuous and pulsed regimes as well as a rate-equation model considering the current heating have been employed to analyze the ground-state (gs) and excited-state (es) lasing processes. we show that the self-heating causes the quenching of the gs lasing and the es lasing by the increased carrier escape rate and the reduced maximum modal gain of gs and es.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-08-17t02:50:13z no. of bitstreams: 1 jjap-49-072103.pdf: 1317294 bytes, checksum: bf436348544994d33acf05564b2100c4 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-08-17t02:54:48z (gmt) no. of bitstreams: 1 jjap-49-072103.pdf: 1317294 bytes, checksum: bf436348544994d33acf05564b2100c4 (md5); made available in dspace on 2010-08-17t02:54:48z (gmt). no. of bitstreams: 1 jjap-49-072103.pdf: 1317294 bytes, checksum: bf436348544994d33acf05564b2100c4 (md5) previous issue date: 2010; the authors would like to thank professor chang-zhi guo of peking university for beneficial discussions. this work was supported by the national high technology research and development program of china (grant no. 2006aa03z401), "one-hundred talents program'' of the chinese academy of sciences, and the national science foundation of china (grant no. 60876033).; 其它 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | the authors would like to thank professor chang-zhi guo of peking university for beneficial discussions. this work was supported by the national high technology research and development program of china (grant no. 2006aa03z401), "one-hundred talents program'' of the chinese academy of sciences, and the national science foundation of china (grant no. 60876033). |
| 语种 | 英语 |
| 公开日期 | 2010-08-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13494]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Ji HM ,Yang T ,Cao YL ,et al. Self-Heating Effect on the Two-State Lasing Behaviors in 1.3-mu m InAs-GaAs Quantum-Dot Lasers[J]. japanese journal of applied physics,2010,49(7):art. no. 072103. |
| APA | Ji HM ,Yang T ,Cao YL ,Xu PF ,Gu YX ,&Wang ZG .(2010).Self-Heating Effect on the Two-State Lasing Behaviors in 1.3-mu m InAs-GaAs Quantum-Dot Lasers.japanese journal of applied physics,49(7),art. no. 072103. |
| MLA | Ji HM ,et al."Self-Heating Effect on the Two-State Lasing Behaviors in 1.3-mu m InAs-GaAs Quantum-Dot Lasers".japanese journal of applied physics 49.7(2010):art. no. 072103. |
入库方式： OAI收割
来源：半导体研究所
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