Impact of symmetrized and Burt-Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots
文献类型：期刊论文
| 作者 | Gu YX (Gu Yong-Xian) ; Yang T (Yang Tao) ; Ji HM (Ji Hai-Ming) ; Xu PF (Xu Peng-Fei) ; Wang ZG (Wang Zhan-Guo) |
| 刊名 | chinese physics b
 |
| 出版日期 | 2010 |
| 卷号 | 19期号:8页码:art. no. 088102 |
| 关键词 | quantum dot symmetrized Hamiltonian Burt-Foreman Hamiltonian finite element method spurious solutions EFFECTIVE-MASS APPROXIMATION P THEORY |
| 合作状况 | 其它 |
| 英文摘要 | we present a systematic investigation of calculating quantum dots (qds) energy levels using finite element method in the frame of eight-band k . p method. numerical results including piezoelectricity, electron and hole levels, as yell as wave functions are achieved. in the calculation of energy levels, we do observe spurious solutions (sss) no matter burt-foreman or symmetrized hamiltonians are used. different theories are used to analyse the sss, we find that the ellipticity theory can give a better explanation for the origin of sss and symmetrized hamiltonian is easier to lead to sss. the energy levels simulated with the two hamiltonians are compared to each other after eliminating sss, different hamiltonians cause a larger difference on electron energy levels than that on hole energy levels and this difference decreases with the increase of qd size.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-09-07t12:19:32z no. of bitstreams: 1 impact of symmetrized and burt-foreman hamiltonians on spurious solutions and energy levels of inasgaas quantum dots.pdf: 338964 bytes, checksum: d93734ed7914009eb5ad50b0204739ba (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-09-07t13:09:05z (gmt) no. of bitstreams: 1 impact of symmetrized and burt-foreman hamiltonians on spurious solutions and energy levels of inasgaas quantum dots.pdf: 338964 bytes, checksum: d93734ed7914009eb5ad50b0204739ba (md5); made available in dspace on 2010-09-07t13:09:05z (gmt). no. of bitstreams: 1 impact of symmetrized and burt-foreman hamiltonians on spurious solutions and energy levels of inasgaas quantum dots.pdf: 338964 bytes, checksum: d93734ed7914009eb5ad50b0204739ba (md5) previous issue date: 2010; 其它 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-09-07 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13509]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Gu YX ,Yang T ,Ji HM ,et al. Impact of symmetrized and Burt-Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots[J]. chinese physics b,2010,19(8):art. no. 088102. |
| APA | Gu YX ,Yang T ,Ji HM ,Xu PF ,&Wang ZG .(2010).Impact of symmetrized and Burt-Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots.chinese physics b,19(8),art. no. 088102. |
| MLA | Gu YX ,et al."Impact of symmetrized and Burt-Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots".chinese physics b 19.8(2010):art. no. 088102. |
入库方式： OAI收割
来源：半导体研究所
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