Multi-wafer 3C-SiC heteroepitaxial growth on Si(100) substrates
文献类型：期刊论文
| 作者 | Sun GS (Sun Guo-Sheng) ; Liu XF (Liu Xing-Fang) ; Wang L (Wang Lei) ; Zhao WS (Zhao Wan-Shun) ; Yang T (Yang Ting) ; Wu HL (Wu Hai-Lei) ; Yan GG (Yan Guo-Guo) ; Zhao YM (Zhao Yong-Mei) ; Ning J (Ning Jin) ; Zeng YP (Zeng Yi-Ping) ; Li JM (Li Jin-Min) |
| 刊名 | chinese physics b
 |
| 出版日期 | 2010 |
| 卷号 | 19期号:8页码:art. no. 088101 |
| 关键词 | 3C-SiC heteroepitaxial multi-wafer uniformity |
| 合作状况 | 国内 |
| 英文摘要 | epitaxial growth of semiconductor films in multiple-wafer mode is under vigorous development in order to improve yield output to meet the industry increasing demands. here we report on results of the heteroepitaxial growth of multi-wafer 3c-sic films on si(100) substrates by employing a home-made horizontal hot wall low pressure chemical vapour deposition (hwlpcvd) system which was designed to be have a high-throughput, multi-wafer (3x2-inch) capacity. 3c-sic film properties of the intra-wafer and the wafer-to-wafer including crystalline morphologies, structures and electronics are characterized systematically. the undoped and the moderate nh3 doped n-type 3c-sic films with specular surface are grown in the hwlpcvd, thereafter uniformities of intra-wafer thickness and sheet resistance of the 3c-sic films are obtained to be 6%similar to 7% and 6.7%similar to 8%, respectively, and within a run, the deviations of wafer-to-wafer thickness and sheet resistance are less than 1% and 0.8%, respectively.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-09-07t12:24:38z no. of bitstreams: 1 multi-wafer 3c-sic heteroepitaxial growth on si(100) substrates.pdf: 189693 bytes, checksum: 496e709b735d265458bab1dca731b48b (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-09-07t13:09:19z (gmt) no. of bitstreams: 1 multi-wafer 3c-sic heteroepitaxial growth on si(100) substrates.pdf: 189693 bytes, checksum: 496e709b735d265458bab1dca731b48b (md5); made available in dspace on 2010-09-07t13:09:19z (gmt). no. of bitstreams: 1 multi-wafer 3c-sic heteroepitaxial growth on si(100) substrates.pdf: 189693 bytes, checksum: 496e709b735d265458bab1dca731b48b (md5) previous issue date: 2010; 国内 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-09-07 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13510]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Sun GS ,Liu XF ,Wang L ,et al. Multi-wafer 3C-SiC heteroepitaxial growth on Si(100) substrates[J]. chinese physics b,2010,19(8):art. no. 088101. |
| APA | Sun GS .,Liu XF .,Wang L .,Zhao WS .,Yang T .,...&Li JM .(2010).Multi-wafer 3C-SiC heteroepitaxial growth on Si(100) substrates.chinese physics b,19(8),art. no. 088101. |
| MLA | Sun GS ,et al."Multi-wafer 3C-SiC heteroepitaxial growth on Si(100) substrates".chinese physics b 19.8(2010):art. no. 088101. |
入库方式： OAI收割
来源：半导体研究所
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