Strong circular photogalvanic effect in ZnO epitaxial films
文献类型：期刊论文
| 作者 | Zhang Q (Zhang Q.) ; Wang XQ (Wang X. Q.) ; Yin CM (Yin C. M.) ; Xu FJ (Xu F. J.) ; Tang N (Tang N.) ; Shen B (Shen B.) ; Chen YH (Chen Y. H.) ; Chang K (Chang K.) ; Ge WK (Ge W. K.) ; Ishitani Y (Ishitani Y.) ; Yoshikawa A (Yoshikawa A.) |
| 刊名 | applied physics letters
 |
| 出版日期 | 2010 |
| 卷号 | 97期号:4页码:art. no. 041907 |
| 关键词 | II-VI semiconductors photoconductivity photovoltaic effects semiconductor epitaxial layers spin-orbit interactions valence bands wide band gap semiconductors zinc compounds |
| 合作状况 | 国际 |
| 英文摘要 | we report a strong circular photogalvanic effect (cpge) in zno epitaxial films under interband excitation. it is observed that cpge current is as large as 100 na/w in zno, which is about one order in magnitude higher than that in inn film while the cpge currents in gan films are not detectable. the possible reasons for the above observations are the strong spin orbit coupling in zno or the inversed valence band structure of zno.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-09-07t12:49:57z no. of bitstreams: 1 strong circular photogalvanic effect in zno epitaxial films.pdf: 403925 bytes, checksum: 8ca0c9a7eb8a957f30738854896274ff (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-09-07t13:10:44z (gmt) no. of bitstreams: 1 strong circular photogalvanic effect in zno epitaxial films.pdf: 403925 bytes, checksum: 8ca0c9a7eb8a957f30738854896274ff (md5); made available in dspace on 2010-09-07t13:10:44z (gmt). no. of bitstreams: 1 strong circular photogalvanic effect in zno epitaxial films.pdf: 403925 bytes, checksum: 8ca0c9a7eb8a957f30738854896274ff (md5) previous issue date: 2010; 国际 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-09-07 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13520]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Zhang Q ,Wang XQ ,Yin CM ,et al. Strong circular photogalvanic effect in ZnO epitaxial films[J]. applied physics letters,2010,97(4):art. no. 041907. |
| APA | Zhang Q .,Wang XQ .,Yin CM .,Xu FJ .,Tang N .,...&Yoshikawa A .(2010).Strong circular photogalvanic effect in ZnO epitaxial films.applied physics letters,97(4),art. no. 041907. |
| MLA | Zhang Q ,et al."Strong circular photogalvanic effect in ZnO epitaxial films".applied physics letters 97.4(2010):art. no. 041907. |
入库方式： OAI收割
来源：半导体研究所
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