Abnormal temperature dependent photoluminescence of self-assembled InAs/GaAs surface quantum dots with high areal density
文献类型：期刊论文
| 作者 | Zhou XL (Zhou X. L.) ; Chen YH (Chen Y. H.) ; Liu JQ (Liu J. Q.) ; Xu B (Xu B.) ; Ye XL (Ye X. L.) ; Wang ZG (Wang Z. G.) |
| 刊名 | physica e-low-dimensional systems & nanostructures
 |
| 出版日期 | 2010 |
| 卷号 | 42期号:9页码:2455-2459 |
| 关键词 | Quantum dots Temperature dependent Photoluminescence Surface localized centers |
| 合作状况 | 其它 |
| 英文摘要 | we have investigated temperature dependent photoluminescence of both buried and surface self-assembled inas/gaas quantum dots with an areal density up to similar to 10(11)/cm(2). different from the buried quantum dots, the peak energy of surface quantum dots shows a blueshift relative to the bulk material variation from 15 to 130k. besides the line width and the integrated intensity both first decrease and then increase in this temperature interval. the observed phenomena can be explained by carrier trapping effects by some shallow localized centers near the surface quantum dots.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-09-07t12:59:33z no. of bitstreams: 1 abnormal temperature dependent photoluminescence of self-assembled inasgaas surface quantum dots with high areal density.pdf: 540608 bytes, checksum: f015d76e710d3167bcadd0d34e53fa28 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-09-07t13:11:17z (gmt) no. of bitstreams: 1 abnormal temperature dependent photoluminescence of self-assembled inasgaas surface quantum dots with high areal density.pdf: 540608 bytes, checksum: f015d76e710d3167bcadd0d34e53fa28 (md5); made available in dspace on 2010-09-07t13:11:17z (gmt). no. of bitstreams: 1 abnormal temperature dependent photoluminescence of self-assembled inasgaas surface quantum dots with high areal density.pdf: 540608 bytes, checksum: f015d76e710d3167bcadd0d34e53fa28 (md5) previous issue date: 2010; 其它 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-09-07 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13524]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Zhou XL ,Chen YH ,Liu JQ ,et al. Abnormal temperature dependent photoluminescence of self-assembled InAs/GaAs surface quantum dots with high areal density[J]. physica e-low-dimensional systems & nanostructures,2010,42(9):2455-2459. |
| APA | Zhou XL ,Chen YH ,Liu JQ ,Xu B ,Ye XL ,&Wang ZG .(2010).Abnormal temperature dependent photoluminescence of self-assembled InAs/GaAs surface quantum dots with high areal density.physica e-low-dimensional systems & nanostructures,42(9),2455-2459. |
| MLA | Zhou XL ,et al."Abnormal temperature dependent photoluminescence of self-assembled InAs/GaAs surface quantum dots with high areal density".physica e-low-dimensional systems & nanostructures 42.9(2010):2455-2459. |
入库方式： OAI收割
来源：半导体研究所
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