Raman scattering study of vibrational modes and hole concentration in GaxMn1-xSb
文献类型：期刊论文
| 作者 | Islam MR (Islam M. R.) ; Hasan MM (Hasan M. M.) ; Chen N (Chen N.) ; Fukuzawa M (Fukuzawa M.) ; Yamada M (Yamada M.) |
| 刊名 | semiconductor science and technology
 |
| 出版日期 | 2010 |
| 卷号 | 25期号:9页码:art. no. 095010 |
| 关键词 | DILUTED MAGNETIC SEMICONDUCTORS PHONON FERROMAGNETISM TEMPERATURE GA1-XMNXAS SPECTRA STRAIN LAYERS GAAS SPIN |
| 合作状况 | 国际 |
| 英文摘要 | the raman scattering study of vibrational modes and hole concentration in a ferromagnetic semiconductor ga1-xmnxsb grown by mn ion implantation, deposition and post-annealing has been presented. the experiments are performed both in implanted and unimplanted regions before and after etching the samples. the raman spectra measured from the unimplanted region show only gasb-like phonon modes. on the other hand, the spectra measured from the implanted region show additional phonon modes approximately at 115, 152, 269, 437 and 659 cm(-1). the experimental results demonstrate that the extra modes are associated with surface defects, crystal disorder and blackish layer that is formed due to mn ion implantation, deposition and annealing processes. furthermore, we have determined the hole concentration as a function of laser probing position by modeling the raman spectra using coupled mode theory. the contributions of gasb-like phonon modes and coupled lo-phonon plasmon mode are taken into consideration in the model. the hole-concentration-dependent clopm is resolved in the spectra measured from the implanted and nearby implanted regions. the hole concentrations determined by raman scattering are found to be in good agreement with those measured by the electrochemical capacitance-voltage technique.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-09-20t08:04:25z no. of bitstreams: 1 raman scattering study of vibrational modes and hole concentration in gaxmn1-xsb.pdf: 851404 bytes, checksum: 5798e7beea86a1cca20fad1ebc4f7f65 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-09-20t08:27:54z (gmt) no. of bitstreams: 1 raman scattering study of vibrational modes and hole concentration in gaxmn1-xsb.pdf: 851404 bytes, checksum: 5798e7beea86a1cca20fad1ebc4f7f65 (md5); made available in dspace on 2010-09-20t08:27:54z (gmt). no. of bitstreams: 1 raman scattering study of vibrational modes and hole concentration in gaxmn1-xsb.pdf: 851404 bytes, checksum: 5798e7beea86a1cca20fad1ebc4f7f65 (md5) previous issue date: 2010; 国际 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-09-20 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13532]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Islam MR ,Hasan MM ,Chen N ,et al. Raman scattering study of vibrational modes and hole concentration in GaxMn1-xSb[J]. semiconductor science and technology,2010,25(9):art. no. 095010. |
| APA | Islam MR ,Hasan MM ,Chen N ,Fukuzawa M ,&Yamada M .(2010).Raman scattering study of vibrational modes and hole concentration in GaxMn1-xSb.semiconductor science and technology,25(9),art. no. 095010. |
| MLA | Islam MR ,et al."Raman scattering study of vibrational modes and hole concentration in GaxMn1-xSb".semiconductor science and technology 25.9(2010):art. no. 095010. |
入库方式： OAI收割
来源：半导体研究所
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