Evaluating 0.53 eVGaInAsSbthermophotovoltaic diode based on an analytical absorption model
文献类型：期刊论文
| 作者 | Wang Y (Wang Y.) ; Chen NF (Chen N. F.) ; Zhang XW (Zhang X. W.) ; Huang TM (Huang T. M.) ; Yin ZG (Yin Z. G.) ; Bai YM (Bai Y. M.) |
| 刊名 | semiconductor science and technology
 |
| 出版日期 | 2010 |
| 卷号 | 25期号:9页码:art. no. 095002 |
| 关键词 | OPTICAL DIELECTRIC FUNCTION DISPERSION-RELATIONS CARRIER MOBILITIES PHASE EPITAXY DOPED GAAS DEVICES GASB INP ALXGA1-XAS INGAASSB |
| 合作状况 | 国内 |
| 英文摘要 | radiant heat conversion performance dominated by the active layer of ga0.84in0.16as0.14sb0.86 diode has been systematically investigated based on an analytic absorption spectrum, which is suggested here by numerically fitting the limited experimental data. for the concerned diode configuration, our calculation demonstrates that the optimal base doping is 3-4 x 10(17) cm(-3), which is less sensitive to the variation of the external radiation spectrum. given the scarcity of the alloy elements, an economical device configuration of the 0.2-0.6 mu m emitter and the 4-6 mu m base would be particularly acceptable because the corresponding conversion efficiency cannot exhibit discouraging degradation in comparison to the one for the optimal structure, the thickness of which may be up to 10 mu m. more importantly, the method we suggested here to calculate alloy absorption can be easily transferred to other composition, thus bringing great convenience for design or optimization of the optoelectronic device formed by these alloys.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-09-20t08:08:21z no. of bitstreams: 1 evaluating 0.53 ev gainassb thermophotovoltaic diode based on an analytical absorption model.pdf: 841879 bytes, checksum: e2c9f5f7edcea31837c6512b2de406d3 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-09-20t08:28:01z (gmt) no. of bitstreams: 1 evaluating 0.53 ev gainassb thermophotovoltaic diode based on an analytical absorption model.pdf: 841879 bytes, checksum: e2c9f5f7edcea31837c6512b2de406d3 (md5); made available in dspace on 2010-09-20t08:28:01z (gmt). no. of bitstreams: 1 evaluating 0.53 ev gainassb thermophotovoltaic diode based on an analytical absorption model.pdf: 841879 bytes, checksum: e2c9f5f7edcea31837c6512b2de406d3 (md5) previous issue date: 2010; 国内 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-09-20 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13533]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Wang Y ,Chen NF ,Zhang XW ,et al. Evaluating 0.53 eVGaInAsSbthermophotovoltaic diode based on an analytical absorption model[J]. semiconductor science and technology,2010,25(9):art. no. 095002. |
| APA | Wang Y ,Chen NF ,Zhang XW ,Huang TM ,Yin ZG ,&Bai YM .(2010).Evaluating 0.53 eVGaInAsSbthermophotovoltaic diode based on an analytical absorption model.semiconductor science and technology,25(9),art. no. 095002. |
| MLA | Wang Y ,et al."Evaluating 0.53 eVGaInAsSbthermophotovoltaic diode based on an analytical absorption model".semiconductor science and technology 25.9(2010):art. no. 095002. |
入库方式： OAI收割
来源：半导体研究所
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