A Selective-Area Metal Bonding InGaAsP-Si Laser
文献类型：期刊论文
| 作者 | Hong T (Hong Tao) ; Ran GZ (Ran Guang-Zhao) ; Chen T (Chen Ting) ; Pan JQ (Pan Jiao-Qing) ; Chen WX (Chen Wei-Xi) ; Wang Y (Wang Yang) ; Cheng YB (Cheng Yuan-Bing) ; Liang S (Liang Song) ; Zhao LJ (Zhao Ling-Juan) ; Yin LQ (Yin Lu-Qiao) ; Zhang JH (Zhang Jian-Hua) ; Wang W (Wang Wei) ; Qin GG (Qin Guo-Gang) |
| 刊名 | ieee photonics technology letters
 |
| 出版日期 | 2010 |
| 卷号 | 22期号:15页码:1141-1143 |
| 关键词 | InGaAsP-Si laser selective-area metal bonding (SAMB) Si photonics |
| 通讯作者 | hong, t, peking univ, state key lab mesoscop phys, beijing 100871, peoples r china. e-mail address: qingg@pku.edu.cn |
| 合作状况 | 国内 |
| 英文摘要 | a 1.55-mu m hybrid ingaasp-si laser was fabricated by the selective-area metal bonding method. two si blocking stripes, each with an excess-metals accommodated space, were used to separate the optical coupling area and the metal bonding areas. in such a structure, the air gap between the ingaasp structure and si waveguide has been reduced to be negligible. the laser operates with a threshold current density of 1.7 ka/cm(2) and a slope efficiency of 0.05 w/a under pulsed-wave operation. room-temperature continuous lasing with a maximum output power of 0.45 mw is realized.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-10-11t03:04:33z no. of bitstreams: 1 a selective-area metal bonding ingaasp-si laser.pdf: 422079 bytes, checksum: ad33bcd009e3130fe2d40df056ebe3f6 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-10-11t03:10:42z (gmt) no. of bitstreams: 1 a selective-area metal bonding ingaasp-si laser.pdf: 422079 bytes, checksum: ad33bcd009e3130fe2d40df056ebe3f6 (md5); made available in dspace on 2010-10-11t03:10:42z (gmt). no. of bitstreams: 1 a selective-area metal bonding ingaasp-si laser.pdf: 422079 bytes, checksum: ad33bcd009e3130fe2d40df056ebe3f6 (md5) previous issue date: 2010; this work was supported by the national natural science foundation of china (10874001, 50732001, 10674012, and 60877022) and by the national basic research program of china (973 program, 2007cb613402).; 国内 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | this work was supported by the national natural science foundation of china (10874001, 50732001, 10674012, and 60877022) and by the national basic research program of china (973 program, 2007cb613402). |
| 语种 | 英语 |
| 公开日期 | 2010-10-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13543]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Hong T ,Ran GZ ,Chen T ,et al. A Selective-Area Metal Bonding InGaAsP-Si Laser[J]. ieee photonics technology letters,2010,22(15):1141-1143. |
| APA | Hong T .,Ran GZ .,Chen T .,Pan JQ .,Chen WX .,...&Qin GG .(2010).A Selective-Area Metal Bonding InGaAsP-Si Laser.ieee photonics technology letters,22(15),1141-1143. |
| MLA | Hong T ,et al."A Selective-Area Metal Bonding InGaAsP-Si Laser".ieee photonics technology letters 22.15(2010):1141-1143. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。