Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas
文献类型：期刊论文
| 作者 | Li GD (Li Guodong) ; Yin H (Yin Hong) ; Zhu QS (Zhu Qinsheng) ; Sakaki H (Sakaki Hiroyuki) ; Jiang C (Jiang Chao) |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2010 |
| 卷号 | 108期号:4页码:art. no. 043702 |
| 关键词 | PHOTOLUMINESCENCE HETEROJUNCTIONS SPECTROSCOPY SYSTEMS PHYSICS |
| 通讯作者 | li, gd, natl ctr nanosci & technol, 11 beiyitiao, beijing 100190, peoples r china. e-mail address: jiangch@nanoctr.cn |
| 合作状况 | 国际 |
| 英文摘要 | we have studied the scattering process of algaas/gaas two-dimensional electron gas with the nearby embedded gasb/gaas type-ii quantum dots (qds) at low temperature. quantum hall effect and shubnikov-de haas oscillation were performed to measure the electron density n(2d), the transport lifetime tau(t) and the quantum lifetime tau(q) under various biased gate voltage. by comparing measured results of qds sample with that of reference sample without embedded qds, mobilities (transport mobility mu(t) and quantum mobility mu(q)) dominated by gasb qds scattering were extracted as functions of n(2d). it was found that the ratios of tau(t) to tau(q) were varying within the range of 1-4, implying the scattering mechanism belonging to the sort of short-range interaction. in the framework of born approximation, a scattering model considering rectangular-shaped potential with constant barrier height was successfully applied to explain the transport experimental data. in addition, an oscillating ratio of tau(t)/tau(q) with the increasing n(2d) was predicted in the model.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-10-11t05:54:11z no. of bitstreams: 1 short range scattering mechanism of type-ii gasb-gaas quantum dots on the transport properties of two-dimensional electron gas.pdf: 395032 bytes, checksum: 6a1e134daf7d5dba5e414658c5eee4e4 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-10-11t06:01:51z (gmt) no. of bitstreams: 1 short range scattering mechanism of type-ii gasb-gaas quantum dots on the transport properties of two-dimensional electron gas.pdf: 395032 bytes, checksum: 6a1e134daf7d5dba5e414658c5eee4e4 (md5); made available in dspace on 2010-10-11t06:01:51z (gmt). no. of bitstreams: 1 short range scattering mechanism of type-ii gasb-gaas quantum dots on the transport properties of two-dimensional electron gas.pdf: 395032 bytes, checksum: 6a1e134daf7d5dba5e414658c5eee4e4 (md5) previous issue date: 2010; this work is partially supported by the "hundred talents program" of chinese academy of sciences and partially by the national natural foundation of china with grant no. 60746002.; 国际 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | this work is partially supported by the "hundred talents program" of chinese academy of sciences and partially by the national natural foundation of china with grant no. 60746002. |
| 语种 | 英语 |
| 公开日期 | 2010-10-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13548]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Li GD ,Yin H ,Zhu QS ,et al. Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas[J]. journal of applied physics,2010,108(4):art. no. 043702. |
| APA | Li GD ,Yin H ,Zhu QS ,Sakaki H ,&Jiang C .(2010).Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas.journal of applied physics,108(4),art. no. 043702. |
| MLA | Li GD ,et al."Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas".journal of applied physics 108.4(2010):art. no. 043702. |
入库方式： OAI收割
来源：半导体研究所
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