Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping
文献类型：期刊论文
| 作者 | Yang, Xiaoguang ; Wang, Kefan ; Gu, Yongxian ; Ni, Haiqiao ; Wang, Xiaodong ; Yang, Tao ; Wang, Zhanguo |
| 刊名 | solar energy materials and solar cells
 |
| 出版日期 | 2013 |
| 卷号 | 113页码:144-147 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-08-27 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24267]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Yang, Xiaoguang,Wang, Kefan,Gu, Yongxian,et al. Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping[J]. solar energy materials and solar cells,2013,113:144-147. |
| APA | Yang, Xiaoguang.,Wang, Kefan.,Gu, Yongxian.,Ni, Haiqiao.,Wang, Xiaodong.,...&Wang, Zhanguo.(2013).Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping.solar energy materials and solar cells,113,144-147. |
| MLA | Yang, Xiaoguang,et al."Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping".solar energy materials and solar cells 113(2013):144-147. |
入库方式： OAI收割
来源：半导体研究所
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