Characteristics of GaN-Based High-Voltage LEDs Compared to Traditional High Power LEDs
文献类型：期刊论文
| ; | |
| 作者 | Zhan, Teng; Zhang, Yang; Ma, Jun; Tian, Ting; Li, Jing; Liu, Zhiqiang; Yi, Xiaoyan; Guo, Jinxia; Wang, Guohong; Li, Jinmin |
| 刊名 | ieee photonics technology letters
 ; IEEE PHOTONICS TECHNOLOGY LETTERS
|
| 出版日期 | 2013 ; 2013 |
| 卷号 | 25期号:9页码:844-847 |
| 学科主题 | 半导体器件 ; 半导体器件 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2013-08-27 ; 2013-08-27 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24296]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Zhan, Teng,Zhang, Yang,Ma, Jun,et al. Characteristics of GaN-Based High-Voltage LEDs Compared to Traditional High Power LEDs, Characteristics of GaN-Based High-Voltage LEDs Compared to Traditional High Power LEDs[J]. ieee photonics technology letters, IEEE PHOTONICS TECHNOLOGY LETTERS,2013, 2013,25, 25(9):844-847, 844-847. |
| APA | Zhan, Teng.,Zhang, Yang.,Ma, Jun.,Tian, Ting.,Li, Jing.,...&Li, Jinmin.(2013).Characteristics of GaN-Based High-Voltage LEDs Compared to Traditional High Power LEDs.ieee photonics technology letters,25(9),844-847. |
| MLA | Zhan, Teng,et al."Characteristics of GaN-Based High-Voltage LEDs Compared to Traditional High Power LEDs".ieee photonics technology letters 25.9(2013):844-847. |
入库方式： OAI收割
来源：半导体研究所
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