GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications
文献类型：期刊论文
| ; | |
| 作者 | Li, Jie; Guo, Hao; Liu, Jun; Tang, Jun; Ni, Haiqiao; Shi, Yunbo; Xue, Chenyang; Niu, Zhichuan; Zhang, Wendong; Li, Mifeng |
| 刊名 | nanoscale research letters
 ; NANOSCALE RESEARCH LETTERS
|
| 出版日期 | 2013 ; 2013 |
| 卷号 | 8页码:218 |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2013-08-27 ; 2013-08-27 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24285]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Li, Jie,Guo, Hao,Liu, Jun,et al. GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications, GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications[J]. nanoscale research letters, NANOSCALE RESEARCH LETTERS,2013, 2013,8, 8:218, 218. |
| APA | Li, Jie.,Guo, Hao.,Liu, Jun.,Tang, Jun.,Ni, Haiqiao.,...&Yu, Ying.(2013).GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications.nanoscale research letters,8,218. |
| MLA | Li, Jie,et al."GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications".nanoscale research letters 8(2013):218. |
入库方式： OAI收割
来源：半导体研究所
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