Sub-400 degrees C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS
文献类型：期刊论文
| 作者 | Gong, Xiao ; Han, Genquan ; Liu, Bin ; Wang, Lanxiang ; Wang, Wei ; Yang, Yue ; Kong, Eugene Yu-Jin ; Su, Shaojian ; Xue, Chunlai) ; Cheng, Buwen ; Yeo, Yee-Chia |
| 刊名 | ieee transactions on electron devices
 |
| 出版日期 | 2013 |
| 卷号 | 60期号:5页码:1640-1648 |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-08-27 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24271]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Gong, Xiao,Han, Genquan,Liu, Bin,et al. Sub-400 degrees C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS[J]. ieee transactions on electron devices,2013,60(5):1640-1648. |
| APA | Gong, Xiao.,Han, Genquan.,Liu, Bin.,Wang, Lanxiang.,Wang, Wei.,...&Yeo, Yee-Chia.(2013).Sub-400 degrees C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS.ieee transactions on electron devices,60(5),1640-1648. |
| MLA | Gong, Xiao,et al."Sub-400 degrees C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS".ieee transactions on electron devices 60.5(2013):1640-1648. |
入库方式： OAI收割
来源：半导体研究所
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