Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation
文献类型：期刊论文
| 作者 | Wang, Lanxiang ; Su, Shaojian ; Wang, Wei ; Gong, Xiao ; Yang, Yue ; Guo, Pengfei ; Zhang, Guangze ; Xue, Chunlai ; Cheng, Buwen ; Han, Genquan ; Yeo, Yee-Chia |
| 刊名 | solid-state electronics
 |
| 出版日期 | 2013 |
| 卷号 | 83页码:66-70 |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-08-27 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24288]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Wang, Lanxiang,Su, Shaojian,Wang, Wei,et al. Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation[J]. solid-state electronics,2013,83:66-70. |
| APA | Wang, Lanxiang.,Su, Shaojian.,Wang, Wei.,Gong, Xiao.,Yang, Yue.,...&Yeo, Yee-Chia.(2013).Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation.solid-state electronics,83,66-70. |
| MLA | Wang, Lanxiang,et al."Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation".solid-state electronics 83(2013):66-70. |
入库方式： OAI收割
来源：半导体研究所
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