中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Room temperature photoluminescence of Ge-on-insulator structures formed by rapid melt growth

文献类型:期刊论文

作者Wen, Juanjuan ; Liu, Zhi ; Li, Leliang ; Li, Chong ; Xue, Chunlai ; Zuo, Yuhua ; Li, Chuanbo ; Wang, Qiming ; Cheng, Buwen
刊名journal of applied physics
出版日期2013
卷号113期号:14页码:143107
学科主题光电子学
收录类别SCI
语种英语
公开日期2013-08-27
源URL[http://ir.semi.ac.cn/handle/172111/24312]  
专题半导体研究所_集成光电子学国家重点实验室
推荐引用方式
GB/T 7714
Wen, Juanjuan,Liu, Zhi,Li, Leliang,et al. Room temperature photoluminescence of Ge-on-insulator structures formed by rapid melt growth[J]. journal of applied physics,2013,113(14):143107.
APA Wen, Juanjuan.,Liu, Zhi.,Li, Leliang.,Li, Chong.,Xue, Chunlai.,...&Cheng, Buwen.(2013).Room temperature photoluminescence of Ge-on-insulator structures formed by rapid melt growth.journal of applied physics,113(14),143107.
MLA Wen, Juanjuan,et al."Room temperature photoluminescence of Ge-on-insulator structures formed by rapid melt growth".journal of applied physics 113.14(2013):143107.

入库方式: OAI收割

来源:半导体研究所

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