Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization
文献类型：会议论文
| 作者 | Chen QS(陈启生) ; Lu J; Zhang ZB(张自兵); Wei GD; Prasad V
|
| 出版日期 | 2005-10-16 |
| 会议名称 | 3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3), OCT 16-19, 2005, Beijing, PEOPLES R CHINA |
| 卷号 | 292 |
| 期号 | 2 |
| 页码 | 197–200 |
| 通讯作者 | 陈启生 |
| 中文摘要 | Silicon carbide bulk crystals were grown in an induction-heating furnace using the physical vapor transport method. Crystal growth modeling was performed to obtain the required inert gas pressure and temperatures for sufficiently large growth rates. The SiC crystals were expanded by designing a growth chamber having a positive temperature gradient along the growth interface. The obtained 6H-SiC crystals were cut into wafers and characterized by Raman scattering spectroscopy and X-ray diffraction, and the results showed that most parts of the crystals had good crystallographic structures. |
| 收录类别 | CPCI-S |
| 会议录 | Journal of Crystal Growth
 |
| 学科主题 | 力学 |
| 语种 | 英语 |
| ISSN号 | 0022-0248 |
| WOS记录号 | WOS:000239481000006 |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/13947]  |
| 专题 | 力学研究所_力学所知识产出(1956-2008) |
| 推荐引用方式 GB/T 7714 | Chen QS,Lu J,Zhang ZB,et al. Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization[C]. 见:3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3), OCT 16-19, 2005, Beijing, PEOPLES R CHINA. |
入库方式： OAI收割
来源：力学研究所
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