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Effect of Near-Surface Dopants on the Epitaxial Growth of h-BN on Metal Surfaces

文献类型：期刊论文

作者Wei, Wei2,4,5; Lin, Le3,4; Zhang, Guanhua4; Ye, Xiaoqiu1; Bin, Ren1; Meng, Caixia4; Ning, Yanxiao4; Fu, Qiang4; Bao, Xinhe4,5
刊名ADVANCED MATERIALS INTERFACES
出版日期2019-05-23
卷号6期号:10页码:9
关键词epitaxial growth hexagonal boron nitride (h-BN) LEEM near-surface doping PEEM
ISSN号2196-7350
DOI10.1002/admi.201801906
通讯作者Fu, Qiang(qfu@dicp.ac.cn)
英文摘要Epitaxial growth of ultrathin overlayers on solid substrate is critically dependent on the surface structure, and in this work near-surface doping is identified as another important growth factor. It is shown that growth of hexagonal boron nitride (h-BN) on Ni(111) through chemical vapor deposition or surface ammonization can be strongly modulated by near-surface B doping. Epitaxial h-BN islands form on clean Ni(111) surface, while both epitaxial and nonepitaxial h-BN islands grow on Ni(111) containing near-surface B atoms. Quantitative correlation of epitaxial growth and near-surface doping is unambiguously demonstrated. In situ spatially resolved surface science measurements based on photoemission electron microscopy and low energy electron microscopy in combination with density function calculations reveal that near-surface B atoms weaken the interaction between h-BN overlayer and Ni surface, which favor the nonepitaxial and metastable h-BN structures. The present work suggests that near-surface doping acts as an effective route to influence epitaxial growth of two-dimensional (2D) material overlayers on solids.
WOS关键词HEXAGONAL BORON-NITRIDE ; SUBSURFACE CARBON ; GRAPHENE ; MONOLAYER ; CATALYST ; CO ; OVERLAYERS ; ADSORPTION ; OXIDATION ; HYDROGEN
资助项目National Natural Science Foundation of China[21688102] ; National Natural Science Foundation of China[21825203] ; National Natural Science Foundation of China[21573224] ; National Natural Science Foundation of China[91545204] ; Ministry of Science and Technology of China[2016YFA0200200] ; Ministry of Science and Technology of China[2017YFB0602205] ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDB17020000]
WOS研究方向Chemistry ; Materials Science
语种英语
WOS记录号WOS:000468810200010
出版者WILEY
资助机构National Natural Science Foundation of China ; National Natural Science Foundation of China ; Ministry of Science and Technology of China ; Ministry of Science and Technology of China ; Strategic Priority Research Program of the Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Ministry of Science and Technology of China ; Ministry of Science and Technology of China ; Strategic Priority Research Program of the Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Ministry of Science and Technology of China ; Ministry of Science and Technology of China ; Strategic Priority Research Program of the Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Ministry of Science and Technology of China ; Ministry of Science and Technology of China ; Strategic Priority Research Program of the Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences
源URL[http://cas-ir.dicp.ac.cn/handle/321008/172169]  
专题大连化学物理研究所_中国科学院大连化学物理研究所
通讯作者Fu, Qiang
作者单位1.China Acad Engn Phys, Mianyang 621900, Sichuan, Peoples R China
2.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China
3.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
4.Chinese Acad Sci, State Key Lab Catalysis, iChEM, Dalian Inst Chem Phys, Dalian 116023, Peoples R China
5.Univ Sci & Technol China, Dept Chem Phys, Hefei 230026, Anhui, Peoples R China
推荐引用方式
GB/T 7714		 Wei, Wei,Lin, Le,Zhang, Guanhua,et al. Effect of Near-Surface Dopants on the Epitaxial Growth of h-BN on Metal Surfaces[J]. ADVANCED MATERIALS INTERFACES,2019,6(10):9.
APA Wei, Wei.,Lin, Le.,Zhang, Guanhua.,Ye, Xiaoqiu.,Bin, Ren.,...&Bao, Xinhe.(2019).Effect of Near-Surface Dopants on the Epitaxial Growth of h-BN on Metal Surfaces.ADVANCED MATERIALS INTERFACES,6(10),9.
MLA Wei, Wei,et al."Effect of Near-Surface Dopants on the Epitaxial Growth of h-BN on Metal Surfaces".ADVANCED MATERIALS INTERFACES 6.10(2019):9.

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来源：大连化学物理研究所

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