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Synthesis and stacking sequence characterization of h-BN/graphene heterostructures on Cu-Ni alloy

文献类型：期刊论文

作者Lu, Guangyuan1,2; Zhang, Guanhua3; Sun, Julong3; Wang, Xiujun1,2,4; Shi, Zhiyuan1,2,4; Jiang, Da1,2; Wang, Haomin1,2; Li, Ang1,2; Wu, Tianru1,2; Yu, Qingkai1,2
刊名CARBON
出版日期2019-11-01
卷号152页码:521-526
ISSN号0008-6223
DOI10.1016/j.carbon.2019.06.040
通讯作者Lu, Guangyuan(gylu@mail.sim.ac.cn) ; Wu, Tianru(trwu@mail.sim.ac.cn)
英文摘要Novel properties are found in the vertically stacked graphene and hexagonal boron nitride (h-BN) heterostructures, the performances of which could crucially depend on the stacking sequence. Nevertheless, for most heterostructures fabricated by chemical vapor deposition (CVD), the stacking sequence is uncertain. Here we introduce a facile CVD method to synthesize the h-BN/graphene stacked heterostructures on Cu-Ni alloy substrate via subsequent formation of graphene grains underneath an h-BN-graphene in-plane heterostructure layer. An efficient and non-destructive method is developed to verify the stacking sequence by low-energy electron reflectivity (LEER) measurement. This work will facilitate both fabrication and characterization of van der Waals heterostructures (vdWHs) for the future research and applications. (C) 2019 Elsevier Ltd. All rights reserved.
WOS关键词HEXAGONAL BORON-NITRIDE ; GRAPHENE ; GROWTH
资助项目National Key RD program[2017YFF0206106] ; National Natural Science Foundation of China[51772317] ; National Natural Science Foundation of China[61774040] ; Chinese Academy of Sciences[XDB04040300] ; Chinese Academy of Sciences[XDB30000000] ; Science and Technology Commission of Shanghai Municipality[16ZR1442700] ; Science and Technology Commission of Shanghai Municipality[16ZR1402500] ; Science and Technology Commission of Shanghai Municipality[18511110700] ; Shanghai Rising-Star Program[18QA1404800] ; China Postdoctoral Science Foundation[2017M621563] ; China Postdoctoral Science Foundation[2018T110415]
WOS研究方向Chemistry ; Materials Science
语种英语
出版者PERGAMON-ELSEVIER SCIENCE LTD
WOS记录号WOS:000483384900057
资助机构National Key RD program ; National Key RD program ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Chinese Academy of Sciences ; Chinese Academy of Sciences ; Science and Technology Commission of Shanghai Municipality ; Science and Technology Commission of Shanghai Municipality ; Shanghai Rising-Star Program ; Shanghai Rising-Star Program ; China Postdoctoral Science Foundation ; China Postdoctoral Science Foundation ; National Key RD program ; National Key RD program ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Chinese Academy of Sciences ; Chinese Academy of Sciences ; Science and Technology Commission of Shanghai Municipality ; Science and Technology Commission of Shanghai Municipality ; Shanghai Rising-Star Program ; Shanghai Rising-Star Program ; China Postdoctoral Science Foundation ; China Postdoctoral Science Foundation ; National Key RD program ; National Key RD program ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Chinese Academy of Sciences ; Chinese Academy of Sciences ; Science and Technology Commission of Shanghai Municipality ; Science and Technology Commission of Shanghai Municipality ; Shanghai Rising-Star Program ; Shanghai Rising-Star Program ; China Postdoctoral Science Foundation ; China Postdoctoral Science Foundation ; National Key RD program ; National Key RD program ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Chinese Academy of Sciences ; Chinese Academy of Sciences ; Science and Technology Commission of Shanghai Municipality ; Science and Technology Commission of Shanghai Municipality ; Shanghai Rising-Star Program ; Shanghai Rising-Star Program ; China Postdoctoral Science Foundation ; China Postdoctoral Science Foundation
源URL[http://cas-ir.dicp.ac.cn/handle/321008/173094]  
专题大连化学物理研究所_中国科学院大连化学物理研究所
通讯作者Lu, Guangyuan; Wu, Tianru
作者单位1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
2.CAS Ctr Excellence Superconducting Elect CENSE, Shanghai 200050, Peoples R China
3.Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Mol React Dynam, Dalian 116023, Peoples R China
4.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
5.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
推荐引用方式
GB/T 7714		 Lu, Guangyuan,Zhang, Guanhua,Sun, Julong,et al. Synthesis and stacking sequence characterization of h-BN/graphene heterostructures on Cu-Ni alloy[J]. CARBON,2019,152:521-526.
APA Lu, Guangyuan.,Zhang, Guanhua.,Sun, Julong.,Wang, Xiujun.,Shi, Zhiyuan.,...&Xie, Xiaoming.(2019).Synthesis and stacking sequence characterization of h-BN/graphene heterostructures on Cu-Ni alloy.CARBON,152,521-526.
MLA Lu, Guangyuan,et al."Synthesis and stacking sequence characterization of h-BN/graphene heterostructures on Cu-Ni alloy".CARBON 152(2019):521-526.

入库方式： OAI收割

来源：大连化学物理研究所

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