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Structure modulation induced enhancement of microwave absorption in WS2 nanosheets

文献类型：期刊论文

作者Ding, W.1,2; Hu, L.3; Liu, Q. C.4; Sheng, Z. G.2,3,5; Dai, J. M.1; Zhu, X. B.1; Sun, Y. P.1,3,5
刊名APPLIED PHYSICS LETTERS
出版日期2018-12-10
卷号113期号:24页码:5
ISSN号0003-6951
DOI10.1063/1.5054636
通讯作者Sheng, Z. G.(zhigaosheng@hmfl.ac.cn)
英文摘要This work reports the structural phase manipulation and the enhancement of microwave absorption in WS2 nanosheets. Large-scale WS2 nanosheets (1T@2H WS2) containing mixed 2H and 1T phases were synthesized by a simple hydrothermal process. The structural characteristics and concentration (similar to 60%) of the 1T phase in 1T@2H WS2 nanosheets were identified by X-ray diffraction, Raman spectroscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy. With the emergence of the 1T phase, the permittivity of 1T@2H WS2 is more than three times higher than that of WS2 with a pure 2H phase (2H WS2). Moreover, the microwave absorption properties were remarkably enhanced due to the emergence of the 1T phase. Contrary to 2H WS2, in which microwave reflection loss (R-L) is close to zero, the RL for 1T@2H WS2 can reach -47 dB with an effective bandwidth (< -10 dB) of 5.2GHz. In addition, with the adjustment of the thickness of the absorber layer from 1.5 to 5mm, 1T@2H WS2 can achieve strong absorption in a wide band from 4 to 18 GHz. This finding provides an effective strategy for designing and synthesizing the microwave absorption materials. Published by AIP Publishing.
WOS关键词CARBON NANOTUBES ; PHASE-TRANSITION ; TI3C2 MXENES ; MOS2 ; MICROSPHERES ; NANOCRYSTALS ; BAND
资助项目National Science Foundation of China (NSFC)[U1232210] ; National Science Foundation of China (NSFC)[U1532155] ; National Science Foundation of China (NSFC)[11574316] ; National Science Foundation of China (NSFC)[21301178] ; National Key R&D Program of China[2017YFA0303603] ; National Key R&D Program of China[2016YFA0401803] ; One Thousand Youth Talents Program of China
WOS研究方向Physics
语种英语
出版者AMER INST PHYSICS
WOS记录号WOS:000453223900024
资助机构National Science Foundation of China (NSFC) ; National Science Foundation of China (NSFC) ; National Science Foundation of China (NSFC) ; National Science Foundation of China (NSFC) ; National Key R&D Program of China ; National Key R&D Program of China ; National Key R&D Program of China ; National Key R&D Program of China ; One Thousand Youth Talents Program of China ; One Thousand Youth Talents Program of China ; One Thousand Youth Talents Program of China ; One Thousand Youth Talents Program of China ; National Science Foundation of China (NSFC) ; National Science Foundation of China (NSFC) ; National Science Foundation of China (NSFC) ; National Science Foundation of China (NSFC) ; National Key R&D Program of China ; National Key R&D Program of China ; National Key R&D Program of China ; National Key R&D Program of China ; One Thousand Youth Talents Program of China ; One Thousand Youth Talents Program of China ; One Thousand Youth Talents Program of China ; One Thousand Youth Talents Program of China ; National Science Foundation of China (NSFC) ; National Science Foundation of China (NSFC) ; National Science Foundation of China (NSFC) ; National Science Foundation of China (NSFC) ; National Key R&D Program of China ; National Key R&D Program of China ; National Key R&D Program of China ; National Key R&D Program of China ; One Thousand Youth Talents Program of China ; One Thousand Youth Talents Program of China ; One Thousand Youth Talents Program of China ; One Thousand Youth Talents Program of China ; National Science Foundation of China (NSFC) ; National Science Foundation of China (NSFC) ; National Science Foundation of China (NSFC) ; National Science Foundation of China (NSFC) ; National Key R&D Program of China ; National Key R&D Program of China ; National Key R&D Program of China ; National Key R&D Program of China ; One Thousand Youth Talents Program of China ; One Thousand Youth Talents Program of China ; One Thousand Youth Talents Program of China ; One Thousand Youth Talents Program of China
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/40552]  
专题合肥物质科学研究院_中科院强磁场科学中心
通讯作者Sheng, Z. G.
作者单位1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China
2.Univ Sci & Technol China, Hefei 230026, Anhui, Peoples R China
3.Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Anhui, Peoples R China
4.Huaibei Normal Univ, Sch Phys & Elect Informat, Huaibei 235000, Peoples R China
5.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China
推荐引用方式
GB/T 7714		 Ding, W.,Hu, L.,Liu, Q. C.,et al. Structure modulation induced enhancement of microwave absorption in WS2 nanosheets[J]. APPLIED PHYSICS LETTERS,2018,113(24):5.
APA Ding, W..,Hu, L..,Liu, Q. C..,Sheng, Z. G..,Dai, J. M..,...&Sun, Y. P..(2018).Structure modulation induced enhancement of microwave absorption in WS2 nanosheets.APPLIED PHYSICS LETTERS,113(24),5.
MLA Ding, W.,et al."Structure modulation induced enhancement of microwave absorption in WS2 nanosheets".APPLIED PHYSICS LETTERS 113.24(2018):5.

入库方式： OAI收割

来源：合肥物质科学研究院

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