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Defects in hydrogen implanted SiC

文献类型：期刊论文

作者Zhang, Xiaodong1; Li, Qian1; Wang, Mao2; Zhang, Zhitao3; Akhmadaliev, Shavkat2; Zhou, Shengqiang2; Wu, Yiyong1; Guo, Bin1
刊名NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
出版日期2018-12-01
卷号436页码:107-111
关键词SiC Defects Ion implantation
ISSN号0168-583X
DOI10.1016/j.nimb.2018.09.020
通讯作者Wu, Yiyong(wuyiyong@hit.edu.cn)
英文摘要SiC is a widely used wide-bandgap semiconductor. Ion implantation is often employed in SiC for doping, defect engineering and transferring of SiC thin films on different substrates. To transfer SiC or to get freestanding thin SiC films by "smart-cut" [Appl. Phys. Lett. 112 (2018) 192102], a large fluence of hydrogen (proton) ion implantation will be applied. Here, we show the structure and defect properties in 6H-SiC single crystals after hydrogen implantation up to a fluence of 5 x 10(16) cm(-2) at different energies of ions. We present the characterization by Rutherford Backscattering/Channeling spectrometry, Raman spectroscopy and electron spin resonance. Upon H+ ion implantation, point defects are mainly created and cause the lattice vibration softening. Our analysis also suggests that H+ ion implantation induces less lattice disorder than heavy ions at fluences producing the same number of displacements per atom. We also discuss the possible nature of the point defects and their influence on the electrical properties.
WOS关键词RAMAN-SPECTROSCOPY ; DAMAGE FORMATION ; ION ; SURFACE ; NEUTRON
资助项目111 Project (China)[B18017] ; National Natural Science Foundation of China[5157020135] ; National Natural Science Foundation of China[51202045]
WOS研究方向Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
语种英语
WOS记录号WOS:000452585400017
出版者ELSEVIER SCIENCE BV
资助机构111 Project (China) ; 111 Project (China) ; 111 Project (China) ; 111 Project (China) ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; 111 Project (China) ; 111 Project (China) ; 111 Project (China) ; 111 Project (China) ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; 111 Project (China) ; 111 Project (China) ; 111 Project (China) ; 111 Project (China) ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; 111 Project (China) ; 111 Project (China) ; 111 Project (China) ; 111 Project (China) ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/41143]  
专题合肥物质科学研究院_中科院强磁场科学中心
通讯作者Wu, Yiyong
作者单位1.Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Heilongjiang, Peoples R China
2.Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, Bautzner Landstr 400, D-01328 Dresden, Germany
3.Chinese Acad Sci, Hefei Inst Phys Sci, High Field Magnet Lab, Hefei 230031, Anhui, Peoples R China
推荐引用方式
GB/T 7714		 Zhang, Xiaodong,Li, Qian,Wang, Mao,et al. Defects in hydrogen implanted SiC[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2018,436:107-111.
APA Zhang, Xiaodong.,Li, Qian.,Wang, Mao.,Zhang, Zhitao.,Akhmadaliev, Shavkat.,...&Guo, Bin.(2018).Defects in hydrogen implanted SiC.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,436,107-111.
MLA Zhang, Xiaodong,et al."Defects in hydrogen implanted SiC".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 436(2018):107-111.

入库方式： OAI收割

来源：合肥物质科学研究院

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