Group III nitride compound semiconductor device and method for producing the same
文献类型：专利
| 作者 | SHIBATA, NAOKI; CHIYO, TOSHIAKI; SENDA, MASANOBU; ITO, JUN; WATANABE, HIROSHI; ASAMI, SHINYA; ASAMI, SHIZUYO |
| 专利号 | US20020014629A1 |
| 著作权人 | TOYODA GOSEI CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Group III nitride compound semiconductor device and method for producing the same |
| 英文摘要 | An AlN layer having a surface of a texture structure is formed on a sapphire substrate. Then, a growth suppressing material layer is formed on the AlN layer so that the AlN layer is partially exposed to the outside. Then, group III nitride compound semiconductor layers are grown on the AlN layer and on the growth suppressing material layer by execution of an epitaxial lateral overgrowth method. Thus, a group III nitride compound semiconductor device is produced. An undercoat layer having convex portions each shaped like a truncated hexagonal pyramid is formed on a substrate. Group III nitride compound semiconductor layers having a device function are laminated successively on the undercoat layer. |
| 公开日期 | 2002-02-07 |
| 申请日期 | 2001-06-21 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43400]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOYODA GOSEI CO., LTD. |
| 推荐引用方式 GB/T 7714 | SHIBATA, NAOKI,CHIYO, TOSHIAKI,SENDA, MASANOBU,et al. Group III nitride compound semiconductor device and method for producing the same. US20020014629A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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