METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES
文献类型：专利
| 作者 | FLYNN, JEFFREY, S.; BRANDES, GEORGE, R.; VAUDO, ROBERT, P.; KEOGH, DAVID, M.; XU, XUEPING; LANDINI, BARBARA, E. |
| 专利号 | EP1299900A2 |
| 著作权人 | CREE, INC. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES |
| 英文摘要 | A III-V nitride homoepitaxial microelectronic device structure comprising a III-V nitride homoepitaxial epi layer on a III-V nitride material substrate, e.g., of freestanding character. Various processing techniques are described, including a method of forming a III-V nitride homoepitaxial layer on a corresponding III-V nitride material substrate, by depositing the III-V nitride homoepitaxial layer by a VPE process using Group III source material and nitrogen source material under process conditions including V/III ratio in a range of from about 1 to about 10, nitrogen source material partial pressure in a range of from about 1 to about 10 torr, growth temperature in a range of from about 500 to about 1250 degrees Celsius, and growth rate in a range of from about 0.1 to about 500 microns per hour. The III-V nitride homoepitaxial microelectronic device structures are usefully employed in device applications such as UV LEDs, high electron mobility transistors, and the like. |
| 公开日期 | 2003-04-09 |
| 申请日期 | 2001-06-27 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43401]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CREE, INC. |
| 推荐引用方式 GB/T 7714 | FLYNN, JEFFREY, S.,BRANDES, GEORGE, R.,VAUDO, ROBERT, P.,et al. METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES. EP1299900A2. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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