Structure and method for fabricating semiconductor structures and devices utilizing compliant substrate for materials used to form the same
文献类型：专利
| 作者 | YAMAMOTO, JOYCE; HILT, LYNDEE L. |
| 专利号 | US20030017624A1 |
| 著作权人 | FREESCALE SEMICONDUCTOR, INC. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Structure and method for fabricating semiconductor structures and devices utilizing compliant substrate for materials used to form the same |
| 英文摘要 | High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing a controlled passivation layer during processing. |
| 公开日期 | 2003-01-23 |
| 申请日期 | 2001-07-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43410]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FREESCALE SEMICONDUCTOR, INC. |
| 推荐引用方式 GB/T 7714 | YAMAMOTO, JOYCE,HILT, LYNDEE L.. Structure and method for fabricating semiconductor structures and devices utilizing compliant substrate for materials used to form the same. US20030017624A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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