Method for manufacturing semiconducter laser diode
文献类型：专利
| 作者 | KWAK, JOON-SEOP |
| 专利号 | US20020048835A1 |
| 著作权人 | SAMSUNG ELECTRONICS CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for manufacturing semiconducter laser diode |
| 英文摘要 | A method for manufacturing a semiconductor laser diode is described. The method for manufacturing a semiconductor laser diode includes sequentially forming a buffer layer, a first clad layer, a first waveguide layer, an active layer, a second waveguide layer, a second clad layer, and a cap layer on a substrate, patterning the cap layer, and patterning the second clad layer as a ridge structure by making the patterned cap layer as an upper layer, selectively forming a passivation layer for covering the second clad layer patterned as the ridge structure around the cap layer, and forming an electrode in contact with the cap layer on the passivation layer. |
| 公开日期 | 2002-04-25 |
| 申请日期 | 2001-08-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43418]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SAMSUNG ELECTRONICS CO., LTD. |
| 推荐引用方式 GB/T 7714 | KWAK, JOON-SEOP. Method for manufacturing semiconducter laser diode. US20020048835A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。