Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate
文献类型：专利
| 作者 | CHASON, MARC; VALLIATH, GEORGE; OOMS, WILLIAM J. |
| 专利号 | US20030102473A1 |
| 著作权人 | MOTOROLA, INC. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate |
| 英文摘要 | High quality epitaxial layers of monocrystalline materials can be grown overlying a monocrystalline layer of silicon formed on a low cost substrate, such as glass. The growth of the monocrystalline materials is accomplished by forming a compliant substrate for growing the monocrystalline materials. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon layer is taken care of by the amorphous interface layer. |
| 公开日期 | 2003-06-05 |
| 申请日期 | 2001-08-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43419]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MOTOROLA, INC. |
| 推荐引用方式 GB/T 7714 | CHASON, MARC,VALLIATH, GEORGE,OOMS, WILLIAM J.. Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate. US20030102473A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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