Method for growing ZnO based oxide semiconductor layer and method for manufacturing semiconductor light emitting device using the same
文献类型：专利
| 作者 | IWATA, KAKUYA; FONS, PAUL; YAMADA, AKIMASA; MATSUBARA, KOJI; NIKI, SHIGERU; NAKAHARA, KEN |
| 专利号 | US20020025594A1 |
| 著作权人 | NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for growing ZnO based oxide semiconductor layer and method for manufacturing semiconductor light emitting device using the same |
| 英文摘要 | A substrate such as a sapphire substrate or the like is set to a molecular beam epitaxy (MBE) apparatus. Next, the temperature of the substrate is elevated to the temperature which is lower than the temperature at which a predetermined ZnO based oxide semiconductor layer (i.e. function layer) is grown (S1). Then, raw materials containing oxygen radical is irradiated to the substrate to grow a buffer layer made of ZnO based oxide semiconductor (S2). Subsequently, the irradiation of oxygen radical is stopped so as to eliminate the influence of oxygen onto the buffer layer (S3). Then, the temperature of the substrate is elevated to the temperature at which the predetermined ZnO based oxide semiconductor layer is grown (S4). After that, raw materials containing oxygen radical is irradiated so as to sequentially grow a ZnO based oxide semiconductor layer as a function layer (S5). As a result, a ZnO based oxide semiconductor layer with low concentration of residual carrier can be grown, and a semiconductor light emitting device such as light emitting diode and laser diode with high light emitting characteristics can be obtained. |
| 公开日期 | 2002-02-28 |
| 申请日期 | 2001-08-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43421]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY |
| 推荐引用方式 GB/T 7714 | IWATA, KAKUYA,FONS, PAUL,YAMADA, AKIMASA,et al. Method for growing ZnO based oxide semiconductor layer and method for manufacturing semiconductor light emitting device using the same. US20020025594A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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