Semiconductor device and method of fabricating the same and method of forming nitride based semiconductor layer
文献类型：专利
| 作者 | HAYASHI, NOBUHIKO; KANO, TAKASHI |
| 专利号 | US20020022288A1 |
| 著作权人 | EPISTAR CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device and method of fabricating the same and method of forming nitride based semiconductor layer |
| 英文摘要 | A GaN layer is grown on a sapphire substrate, an SiO2 film is formed on the GaN layer, and a GaN semiconductor layer including an MQW active layer is then grown on the GaN layer and the SiO2 film using epitaxial lateral overgrowth. The GaN based semiconductor layer is removed by etching except in a region on the SiO2 film, and a p electrode is then formed on the top surface of the GaN based semiconductor layer on the SiO2 film, to join the p electrode on the GaN based semiconductor layer to an ohmic electrode on a GaAs substrate. An n electrode is formed on the top surface of the GaN based semiconductor layer. |
| 公开日期 | 2002-02-21 |
| 申请日期 | 2001-09-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43423]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | EPISTAR CORPORATION |
| 推荐引用方式 GB/T 7714 | HAYASHI, NOBUHIKO,KANO, TAKASHI. Semiconductor device and method of fabricating the same and method of forming nitride based semiconductor layer. US20020022288A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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