Method for fabricating ohmic contact layer in semiconductor devices
文献类型：专利
| 作者 | LIU, YET-ZEN; LI, YU DONG |
| 专利号 | US20030077849A1 |
| 著作权人 | GTRAN, INC. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for fabricating ohmic contact layer in semiconductor devices |
| 英文摘要 | A method for depositing ohmic contact material in a semiconductor, ridge type waveguide device is provided. Ohmic contact material is deposited on a semiconductor wafer and a ridge is fabricated with the deposited material and a first layer of photoresist material. A dielectric material layer is deposited on the ridge and a second photoresist material layer is deposited on the dielectric material layer. The second photoresist material layer is opened to expose the ohmic contact layer and any extra metal overhang is removed to expose the self-aligned ohmic contact layer on the ridge. |
| 公开日期 | 2003-04-24 |
| 申请日期 | 2001-10-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43424]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | GTRAN, INC. |
| 推荐引用方式 GB/T 7714 | LIU, YET-ZEN,LI, YU DONG. Method for fabricating ohmic contact layer in semiconductor devices. US20030077849A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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