Semiconductor compliant substrate having a graded monocrystalline layer
文献类型：专利
| 作者 | RAMDANI, JAMAL; HILT, LYNDEE L. |
| 专利号 | EP1346399A2 |
| 著作权人 | MOTOROLA, INC. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor compliant substrate having a graded monocrystalline layer |
| 英文摘要 | High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. A monocrystalline graded layer (32), in which the lattice constant varies with the thickness of the layer, is then formed over the accommodating buffer layer, such that a lattice constant of the top of the graded layer substantially matches the lattice constant of a subsequently grown monocrystalline film. |
| 公开日期 | 2003-09-24 |
| 申请日期 | 2001-11-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43425]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MOTOROLA, INC. |
| 推荐引用方式 GB/T 7714 | RAMDANI, JAMAL,HILT, LYNDEE L.. Semiconductor compliant substrate having a graded monocrystalline layer. EP1346399A2. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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