Method for manufacturing group-III nitride compound semiconductor, and group-III nitride compound semiconductor device
文献类型：专利
| 作者 | NAGAI, SEIJI; KOIKE, MASAYOSHI; TOMITA, KAZUYOSHI |
| 专利号 | US20040219702A1 |
| 著作权人 | TOYODA GOSEI CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for manufacturing group-III nitride compound semiconductor, and group-III nitride compound semiconductor device |
| 英文摘要 | In the epitaxial growth process in which each growth region D is zoned by a mask 2 formed in grid pattern, because a consumption region C of the Group III nitride compound semiconductor is formed in the central portion of each band of the mask 2 between each adjacent edge portion of the growth region D, Group III or Group V raw material is never unnecessarily supplied to the edge portion of the growth region D. As a result, difference of Group III or Group V rare material supply amount to the edge portion and central portion of the device formation region D is suppressed and the edge portion of the device region may not be convexity. |
| 公开日期 | 2004-11-04 |
| 申请日期 | 2002-03-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43427]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOYODA GOSEI CO., LTD. |
| 推荐引用方式 GB/T 7714 | NAGAI, SEIJI,KOIKE, MASAYOSHI,TOMITA, KAZUYOSHI. Method for manufacturing group-III nitride compound semiconductor, and group-III nitride compound semiconductor device. US20040219702A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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