Method of etching substrates
文献类型：专利
| 作者 | YEOM, GEUN-YOUNG; YOO, MYUNG CHEOL; URBANEK, WOLFRAM; SUNG, YOUN-JOON; JEONG, CHANG-HYUN; KIM, KYONG-NAM; KIM, DONG-WOO |
| 专利号 | US20030190770A1 |
| 著作权人 | LG INNOTEK CO. LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of etching substrates |
| 英文摘要 | Thinning and dicing substrates using inductively coupled plasma reactive ion etching (ICP RIE). When dicing, a hard photo-resist pattern or metal mask pattern that defines scribe lines is formed on a sapphire substrate or on a semiconductor epitaxial layer, beneficially by lithographic techniques. Then, the substrate is etched along the scribe lines to form etched channels. An etching gas comprised of BCl3 and/or BCl3/Cl2 gas is used (optionally, Ar can be added). Stress lines are then produced through the substrate along the etched channels. The substrate is then diced along the stress lines. When thinning, a surface of a substrate is subjected to inductively coupled plasma reactive ion etching (ICP RIE) using BCl3 and/or BCl3/Cl2 gas, possibly with some Ar. ICP RIE is particularly useful when working sapphire and other hard substrates. |
| 公开日期 | 2003-10-09 |
| 申请日期 | 2002-04-09 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43429]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LG INNOTEK CO. LTD. |
| 推荐引用方式 GB/T 7714 | YEOM, GEUN-YOUNG,YOO, MYUNG CHEOL,URBANEK, WOLFRAM,et al. Method of etching substrates. US20030190770A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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