Structure including a monocrystalline perovskite oxide layer
文献类型：专利
| 作者 | YU, ZHIYI; DROOPAD, RAVINDRANATH; OVERGAARD, COREY |
| 专利号 | WO2003012831A2 |
| 著作权人 | MOTOROLA, INC. |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Structure including a monocrystalline perovskite oxide layer |
| 英文摘要 | High quality epitaxial layers of monocrystalline oxide materials (24) are grown overlying monocrystalline substrates such as large silicon wafers (22) using RHEED information to control the stoichiometry of the growing film. The monocrystalline oxide layer (24) may be used to form a compliant substrate for monocrystalline growth of additional layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22) spaced apart from the silicon wafer (22) by an amorphous interface layer of silicon oxide (28). The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer (24). |
| 公开日期 | 2003-02-13 |
| 申请日期 | 2002-05-08 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43433]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MOTOROLA, INC. |
| 推荐引用方式 GB/T 7714 | YU, ZHIYI,DROOPAD, RAVINDRANATH,OVERGAARD, COREY. Structure including a monocrystalline perovskite oxide layer. WO2003012831A2. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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