Method for producing group III nitride compounds semiconductor
文献类型：专利
| 作者 | KATO, HISAKI; ASAI, MAKOTO; KANEYAMA, NAOKI; SAWAZAKI, KATSUHISA |
| 专利号 | US20040169192A1 |
| 著作权人 | KATO HISAKI |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for producing group III nitride compounds semiconductor |
| 英文摘要 | A Group III nitride compound semiconductor layer 31 having a pit P is formed owing to a small region S (a). Temperature of a substrate is cooled down, supplying material and amount are switched, and then a second Group III nitride compound semiconductor layer 4 having larger aluminum compound is formed. By forming a layer having larger aluminum compound, the small region S which the first Group III nitride compound semiconductor layer 31 cannot cover is covered by the second Group III nitride compound semiconductor layer 4 (b). The bottom part S of the pit is covered by the second Group III nitride compound semiconductor layer 4 through lateral growth, and the first Group III nitride compound semiconductor layer 32 is grown again through epitaxial growth (c). Accordingly, the Group III nitride compound semiconductor layer 32 rapidly grows in a concave part, to thereby obtain a remarkably flat c-plane can be obtained (d). By temporarily stopping to form a Group III nitride compound semiconductor layer having a pit through epitaxial growth and heating up a substrate to a certain temperature, the surface of the Group III nitride compound semiconductor is activated and a so-called mass transport is generated. Once the bottom part of a pit is covered by the Group III nitride compound semiconductor through lateral growth, a Group III nitride compound semiconductor is formed rapidly on the concave part through epitaxial growth by restarting supplying Group III materials and nitride compound materials. |
| 公开日期 | 2004-09-02 |
| 申请日期 | 2002-06-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43435]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KATO HISAKI |
| 推荐引用方式 GB/T 7714 | KATO, HISAKI,ASAI, MAKOTO,KANEYAMA, NAOKI,et al. Method for producing group III nitride compounds semiconductor. US20040169192A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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