Method for fabricating monolithic integrated semiconductor photonic device
文献类型：专利
| 作者 | BAEK, YONGSOON; PARK, JUNGWOO; KIM, SUNGBOCK; OH, KWANGRYONG |
| 专利号 | US20030143769A1 |
| 著作权人 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for fabricating monolithic integrated semiconductor photonic device |
| 英文摘要 | A method of fabricating a monolithic integrated semiconductor photonic device is provided. In this method, it is possible to remarkably reduce an optical loss in a passive waveguide by forming a non-doped clad layer around a passive layer. Thus, the passive waveguide can be effectively coupled with an active waveguide. Further, a current confinement layer is formed around an active layer, using the non-doped clad layer. Therefore, an expensive tool such as an ion implanter is not required, thereby decreasing manufacturing costs. |
| 公开日期 | 2003-07-31 |
| 申请日期 | 2002-07-02 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43437]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 推荐引用方式 GB/T 7714 | BAEK, YONGSOON,PARK, JUNGWOO,KIM, SUNGBOCK,et al. Method for fabricating monolithic integrated semiconductor photonic device. US20030143769A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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