Electrophoretic processes for the selective deposition of materials on a semiconducting device
文献类型：专利
| 作者 | SUMMERS, CHRISTOPHER J.; MENKARA, HISHAM; CHUA, BEE YIN JANET |
| 专利号 | US20040121502A1 |
| 著作权人 | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Electrophoretic processes for the selective deposition of materials on a semiconducting device |
| 英文摘要 | The present invention provides a process and apparatus for selectively depositing materials on a semiconductor device, such as depositing phosphors or other optical materials on a light emitting diode (LED), using an electrophoretic deposition process. The semiconductor device comprises a p-side and an n-side. A first biasing voltage is applied between an anode and the p-side of the semiconductor device. A second biasing voltage is applied between the p-side and the n-side of the semiconductor device. The relative biasing of the p-side and the n-side determines where coating is deposited on the semiconductor device. An optional pre-coating process is used to deposit a high resistivity dielectric material, such as silica, on the semiconductor device. The pre-coating can even the electric field on the surface of the semiconductor device, where local features such as metal connections or passivation layers disturb the electric field during phosphor deposition without pre-coating. |
| 公开日期 | 2004-06-24 |
| 申请日期 | 2002-10-22 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43445]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED |
| 推荐引用方式 GB/T 7714 | SUMMERS, CHRISTOPHER J.,MENKARA, HISHAM,CHUA, BEE YIN JANET. Electrophoretic processes for the selective deposition of materials on a semiconducting device. US20040121502A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。