Nitride semiconductor, method for manufacturing the same and nitride semiconductor device
文献类型：专利
| 作者 | KAWAGUCHI, YASUTOSHI; ISHIBASHI, AKIHIKO; TSUJIMURA, AYUMU; OTSUKA, NOBUYUKI |
| 专利号 | US20030183827A1 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Nitride semiconductor, method for manufacturing the same and nitride semiconductor device |
| 英文摘要 | A facet-forming layer made of nitride semiconductor containing at least aluminum is formed on a substrate made of gallium nitride (GaN). A facet surface inclined with respect to a C-surface is formed on the surface of the facet-forming layer, and a selective growth layer laterally grows from the inclined facet surface. As a result, the selective growth layer can substantially lattice-match an n-type cladding layer made of n-type AlGaN and grown on the selective growth layer. For example, a laser structure without cracks being generated can be obtained by crystal growth. |
| 公开日期 | 2003-10-02 |
| 申请日期 | 2003-01-28 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43449]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | KAWAGUCHI, YASUTOSHI,ISHIBASHI, AKIHIKO,TSUJIMURA, AYUMU,et al. Nitride semiconductor, method for manufacturing the same and nitride semiconductor device. US20030183827A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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