GaN single-crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same
文献类型：专利
| 作者 | UENO, MASAKI; TAKASUKA, EIRYO; CHUA, SOO-JIN; CHEN, PENG
|
| 专利号 | US20030209185A1 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | GaN single-crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same |
| 英文摘要 | The GaN single-crystal substrate 11 in accordance with the present invention has a polished surface subjected to heat treatment for at least 10 minutes at a substrate temperature of at least 1020° C. in a mixed gas atmosphere containing at least an NH3 gas. As a consequence, an atomic rearrangement is effected in the surface of the substrate 11 in which a large number of minute defects are formed by polishing, so as to flatten the surface of the substrate 1 Therefore, the surface of an epitaxial layer 12 formed on the substrate 11 can be made flat. |
| 公开日期 | 2003-11-13 |
| 申请日期 | 2003-05-08 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43453]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | UENO, MASAKI,TAKASUKA, EIRYO,CHUA, SOO-JIN,et al. GaN single-crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same. US20030209185A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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