Radiation-emitting semiconductor component based on gallium nitride, and method for fabricating the semiconductor component
文献类型：专利
| 作者 | BADER, STEFAN; HAHN, BERTHOLD; HRLE, VOLKER; LUGAUER, HANS-JURGEN |
| 专利号 | US20030218181A1 |
| 著作权人 | OSRAM GMBH |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Radiation-emitting semiconductor component based on gallium nitride, and method for fabricating the semiconductor component |
| 英文摘要 | A radiation-emitting semiconductor component has a high p-type conductivity. The semiconductor body of the component includes a substrate, preferably an SiC-based substrate, on which a plurality of GaN-based layers have been formed. The active region of these layers is arranged between at least one n-conducting layer and a p-conducting layer. The p-conducting layer is grown in tensile-stressed form. The p-doping that is used is preferably Mg. |
| 公开日期 | 2003-11-27 |
| 申请日期 | 2003-05-15 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43456]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OSRAM GMBH |
| 推荐引用方式 GB/T 7714 | BADER, STEFAN,HAHN, BERTHOLD,HRLE, VOLKER,et al. Radiation-emitting semiconductor component based on gallium nitride, and method for fabricating the semiconductor component. US20030218181A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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