Defect-free semiconductor templates for epitaxial growth and method of making same
文献类型：专利
| 作者 | SHCHUKIN, VITALY; LEDENTSOV, NIKOLAI |
| 专利号 | US20030203531A1 |
| 著作权人 | VITALY SHCHUKIN |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Defect-free semiconductor templates for epitaxial growth and method of making same |
| 英文摘要 | A method for fabrication of defect-free epitaxial layers on top of a surface of a first defect-containing solid state material includes the steps of selective deposition of a second material, having a high temperature stability, on defect-free regions of the first solid state material, followed by subsequent evaporation of the regions in the vicinity of the defects, and subsequent overgrowth by a third material forming a defect-free layer. |
| 公开日期 | 2003-10-30 |
| 申请日期 | 2003-06-06 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43457]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | VITALY SHCHUKIN |
| 推荐引用方式 GB/T 7714 | SHCHUKIN, VITALY,LEDENTSOV, NIKOLAI. Defect-free semiconductor templates for epitaxial growth and method of making same. US20030203531A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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