Method of manufacturing a semiconductor laser
文献类型：专利
| 作者 | HATORI, NOBUAKI |
| 专利号 | US20040038440A1 |
| 著作权人 | FUJITSU LIMITED |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of manufacturing a semiconductor laser |
| 英文摘要 | An AlGaAs cladding layer is formed on a GaAs semiconductor substrate, and then an i-type GaAs layer is formed thereon. Then, stripe-like grooves are formed in the GaAs layer by the photolithography method, and then an InAs layer is formed by the MBE method. At this time, edges of convex portions are deformed to be gentle with a rise of a substrate temperature, and thus flat portions are almost eliminated. Then, InAs is hardly deposited on slant surfaces of the convex portions and the InAs is grown on the bottom portions of the grooves in the S-K mode, so that InAs islands that are separated mutually are formed. Then, quantum dots are formed by covering the InAs islands with i-type GaAs. In this manner, a periodic structure of the quantum dots is formed by using the grooves. |
| 公开日期 | 2004-02-26 |
| 申请日期 | 2003-08-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43464]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | HATORI, NOBUAKI. Method of manufacturing a semiconductor laser. US20040038440A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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