Vertical-cavity, surface-emission type laser diode and fabrication process thereof
文献类型：专利
| 作者 | SATO, SHUNICHI; TAKAHASHI, TAKASHI; JIKUTANI, NAOTO; KAMINISHI, MORIMASA; ITOH, AKIHIRO |
| 专利号 | US20040065888A1 |
| 著作权人 | RICOH COMPANY, LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Vertical-cavity, surface-emission type laser diode and fabrication process thereof |
| 英文摘要 | A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector. |
| 公开日期 | 2004-04-08 |
| 申请日期 | 2003-10-01 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43467]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RICOH COMPANY, LTD. |
| 推荐引用方式 GB/T 7714 | SATO, SHUNICHI,TAKAHASHI, TAKASHI,JIKUTANI, NAOTO,et al. Vertical-cavity, surface-emission type laser diode and fabrication process thereof. US20040065888A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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