Method for manufacturing gallium nitride compound semiconductor
文献类型：专利
| 作者 | KOIDE, NORIKATSU |
| 专利号 | US20040079958A1 |
| 著作权人 | TOYODA GOSEI CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for manufacturing gallium nitride compound semiconductor |
| 英文摘要 | An Al0.15Ga0.85N layer 2 is formed on a silicon substrate 1 in a striped or grid pattern. A GaN layer 3 is formed in regions A where the substrate 1 is exposed and in regions B which are defined above the layer 2. At this time, the GaN layer grows epitaxially and three-dimensionally (not only in a vertical direction but also in a lateral direction) on the Al0.15Ga0.85N layer 2. Since the GaN layer grows epitaxially in the lateral direction as well, a GaN compound semiconductor having a greatly reduced number of dislocations is obtained in lateral growth regions (regions A where the substrate 1 is exposed). |
| 公开日期 | 2004-04-29 |
| 申请日期 | 2003-10-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43470]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOYODA GOSEI CO., LTD. |
| 推荐引用方式 GB/T 7714 | KOIDE, NORIKATSU. Method for manufacturing gallium nitride compound semiconductor. US20040079958A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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