Quantum well intermixing in semiconductor photonic devices
文献类型：专利
| 作者 | NAJDA, STEPHEN, PETER |
| 专利号 | WO2004042801A2 |
| 著作权人 | INTENSE PHOTONICS LIMITED |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Quantum well intermixing in semiconductor photonic devices |
| 英文摘要 | A method for fabricating a semiconductor device in a semiconductor structure, provides enhanced quantum well intermixing in desired regions of the device by forming a first, relatively high quality, epitaxial layer on a substrate, the high quality layer including a quantum well; forming a second, relatively lower quality, epitaxial defect layer on top of the high quality layer; and thermally processing the structure to effect at least partial diffusion of the defects from the defect layer into the high quality layer in order to achieve quantum well intermixing in the structure. The use of an epitaxially grown defect layer on top of, or within, a high quality epitaxially grown device body enables quantum well intermixing techniques to be performed at lower temperatures and thereby improves device characteristics. |
| 公开日期 | 2004-05-21 |
| 申请日期 | 2003-10-30 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43472]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INTENSE PHOTONICS LIMITED |
| 推荐引用方式 GB/T 7714 | NAJDA, STEPHEN, PETER. Quantum well intermixing in semiconductor photonic devices. WO2004042801A2. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。