Method for fabricating a light-emitting device based on a gallium nitride-based compound semiconductor, and light-emitting device based on a gallium nitride-based compound semiconductor
文献类型：专利
| 作者 | HAHN, BERTHOLD; HANGLEITER, ANDREAS; HARLE, VOLKER |
| 专利号 | US20040152226A1 |
| 著作权人 | OSRAM OPTO SEMICONDUCTORS GMBH |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for fabricating a light-emitting device based on a gallium nitride-based compound semiconductor, and light-emitting device based on a gallium nitride-based compound semiconductor |
| 英文摘要 | A light-emitting device is based on a gallium nitride-based compound semiconductor. A light-emitting layer with a first and a second main surface is formed from a compound semiconductor based on gallium nitride. A first coating layer, which is joined to the first main surface of the light-emitting layer, is formed from an n-type compound semiconductor based on gallium nitride. The composition of which differs from that of the compound semiconductor of the light-emitting layer. A second coating layer, which is joined to the second main surface of the light-emitting layer, is formed from a p-type compound semiconductor based on gallium nitride, the composition of which differs from that of the compound semiconductor of the light-emitting layer. To improve the light yield of the device, the thickness of the light-emitting layer in the vicinity of dislocations is configured to be lower than in the remaining regions. |
| 公开日期 | 2004-08-05 |
| 申请日期 | 2004-01-20 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43476]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OSRAM OPTO SEMICONDUCTORS GMBH |
| 推荐引用方式 GB/T 7714 | HAHN, BERTHOLD,HANGLEITER, ANDREAS,HARLE, VOLKER. Method for fabricating a light-emitting device based on a gallium nitride-based compound semiconductor, and light-emitting device based on a gallium nitride-based compound semiconductor. US20040152226A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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