Semiconductor laser element and optical data recording device
文献类型：专利
| 作者 | YAMASAKI, YUKIO; ITO, SHIGETOSHI |
| 专利号 | US20040201031A1 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and optical data recording device |
| 英文摘要 | A semiconductor laser element has the following structure. In the clad layer, a difference in a light radiation loss between the basic horizontal-lateral mode and the 1st-order horizontal-lateral mode is 10 cmor more. The refractive index of the clad layer is below an effective index against light in the basic horizontal-lateral mode, and the refractive index of the clad layer is equal to or more than an effective index against light in the 1st-order horizontal-lateral mode. The upper clad layer is provided only above a portion of the active layer, and thus is at least included in the ridge-stripe structure. This structure inhibits the I-L characteristic from suffering kink and realizes oscillations in the basic horizontal-lateral mode until output power reaches as high as 60-100 mW, in a peak output power of the semiconductor laser element at the time of a pulse current operation. This structure also enables the FFP to have an ellipticity of close to 1, thus making the spot of the semiconductor laser element close to a circular shape. |
| 公开日期 | 2004-10-14 |
| 申请日期 | 2004-01-30 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43477]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | YAMASAKI, YUKIO,ITO, SHIGETOSHI. Semiconductor laser element and optical data recording device. US20040201031A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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