Type II quantum well mid-infrared optoelectronic devices
文献类型：专利
| 作者 | MAWST, LUKE J.; TANSU, NELSON; MEYER, JERRY R.; VURGAFTMAN, IGOR |
| 专利号 | US20050173694A1 |
| 著作权人 | THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVY |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Type II quantum well mid-infrared optoelectronic devices |
| 英文摘要 | Semiconductor optoelectronic devices such as diode lasers are formed on InP substrates with an active region with an InAsN or InGaAsN electron quantum well layer and a GaAsSb or InGaAsSb hole quantum well layer which form a type II quantum well. The active region may be incorporated in various devices to provide light emission at relatively long wavelengths, including light emitting diodes, amplifiers, surface emitting lasers and edge-emitting lasers. |
| 公开日期 | 2005-08-11 |
| 申请日期 | 2004-02-05 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43478]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVY |
| 推荐引用方式 GB/T 7714 | MAWST, LUKE J.,TANSU, NELSON,MEYER, JERRY R.,et al. Type II quantum well mid-infrared optoelectronic devices. US20050173694A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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