Semiconductor device and method for fabricating the same
文献类型：专利
| 作者 | INOUE, KAORU; IKEDA, YOSHITO; HIROSE, YUTAKA; NISHII, KATSUNORI |
| 专利号 | US20040175853A1 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device and method for fabricating the same |
| 英文摘要 | A semiconductor device has an active region composed of a group III-V nitride semiconductor and ohmic electrodes and a gate electrode each formed on the active region. The active region has an entire surface thereof exposed to a plasma such that a surface potential for electrons therein is lower than in the case where the entire surface is not exposed to the plasma. |
| 公开日期 | 2004-09-09 |
| 申请日期 | 2004-02-26 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43480]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | INOUE, KAORU,IKEDA, YOSHITO,HIROSE, YUTAKA,et al. Semiconductor device and method for fabricating the same. US20040175853A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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