Method of fabricating nitride semiconductor device
文献类型：专利
| 作者 | KAWAKAMI, TOSHIYUKI; YAMASAKI, YUKIO; ITO, SHIGETOSHI; OMI, SUSUMU |
| 专利号 | US20040191942A1 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of fabricating nitride semiconductor device |
| 英文摘要 | In a wafer having an LD structure 251 formed on a GaN-based substrate 250, cleavage guide grooves 252 are formed in its surface by scribing from above the LD structure 251 with a diamond needle. The cleavage guide grooves 252 are formed one along each of stripe-shaped waveguides 253 formed parallel to the direction of the wafer, and are formed in the shape of broken lines in the direction of the wafer. |
| 公开日期 | 2004-09-30 |
| 申请日期 | 2004-04-02 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43484]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | KAWAKAMI, TOSHIYUKI,YAMASAKI, YUKIO,ITO, SHIGETOSHI,et al. Method of fabricating nitride semiconductor device. US20040191942A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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